Evaluation of an experimental glass frit free thick film metallization for AlN-ceramics

被引:0
|
作者
Smetana, W
Reicher, R
机构
[1] Vienna Tech Univ, Inst Werkstoffe Elektrotech, A-1040 Vienna, Austria
[2] Vienna Tech Univ, Inst Chem Phys, A-1040 Vienna, Austria
关键词
semiconductors; semiconductor devices; power electronics; AlN ceramics; aluminum nitrides ceramics; thick film metallization; metallization of AlN ceramic; electrical conductive pastes; metallization pastes; thick film pastes; glass frit free metallization pastes; TiCuAg thick film metallization; SEM analysis; Scanning Electron Microscope Analysis; surface analysis; evaluation of experiments;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A glass frit free thick film paste has been especially developed for metallization of AIN ceramic. The metallized ceramic has been characterized theoretically as well as by experiment. A numerical analysis of temperature distribution induced by a continuous and pulsed mode operating heat source has been conducted by means of a finite element program. With regard to evaluate the adhesion properties of the metal film the tensile strength of the metallization has been determined.
引用
收藏
页码:260 / 266
页数:7
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