Evaluation of an experimental glass frit free thick film metallization for AlN-ceramics

被引：0
|
作者：
Smetana, W
Reicher, R
机构：
[1] Vienna Tech Univ, Inst Werkstoffe Elektrotech, A-1040 Vienna, Austria
[2] Vienna Tech Univ, Inst Chem Phys, A-1040 Vienna, Austria
来源：
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 1997年 / 27卷 / 04期
关键词：
semiconductors; semiconductor devices; power electronics; AlN ceramics; aluminum nitrides ceramics; thick film metallization; metallization of AlN ceramic; electrical conductive pastes; metallization pastes; thick film pastes; glass frit free metallization pastes; TiCuAg thick film metallization; SEM analysis; Scanning Electron Microscope Analysis; surface analysis; evaluation of experiments;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A glass frit free thick film paste has been especially developed for metallization of AIN ceramic. The metallized ceramic has been characterized theoretically as well as by experiment. A numerical analysis of temperature distribution induced by a continuous and pulsed mode operating heat source has been conducted by means of a finite element program. With regard to evaluate the adhesion properties of the metal film the tensile strength of the metallization has been determined.
引用
收藏
页码：260 / 266
页数：7
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