Wafer-Scale Dies-Transfer Bonding Technology for Hybrid III/V-on-Silicon Photonic Integrated Circuit Application

被引：17
|
作者：
Luo, Xianshu [1 ]
Cheng, Yuanbing [2 ]
Song, Junfeng [1 ]
Liow, Tsung-Yang [1 ]
Wang, Qi Jie [2 ]
Yu, Mingbin [1 ]
机构：
[1] Agcy Sci Res & Technol, Inst Microelect, Singapore 138634, Singapore
[2] Nanyang Technol Univ, Photon Ctr Excellence, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2016年 / 22卷 / 06期
关键词：
Hybrid integrated circuits; silicon on insulator technology; wafer bonding; semiconductor lasers; WAVE-GUIDE; HETEROGENEOUS INTEGRATION; OPTICAL INTERCONNECTS; LASER; SUBSTRATE; INSULATOR; FUTURE;
D O I：
10.1109/JSTQE.2016.2553453
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we review a variety of hybrid III/V-on-silicon integration platforms with focus on the optical coupling between III/V and silicon waveguides. Numerical simulations with regard to the coupling efficiency are conducted for various mode-overlapped and adiabatic-coupled structures for future design guideline. As a highlight, we show a novel wafer-scale dies-transfer bonding technology that features the merits of high bonding efficiency and process scalability for potential manufacturability of hybrid III/V-on-silicon photonic integrated circuit. Exemplary demonstration of up to 100 dies bonding to an 8-in processed silicon wafer is shown with similar to 80% bonding yield, according to the C-mode scanning acoustic microscope characterization. As a proof-of-concept, hybrid silicon mode-locked lasers using the bonded wafer are demonstrated.
引用
收藏
页码：443 / 454
页数：12
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