Increase in Individual Absorption Bands of MgF2 under Electron Irradiation

被引：1
|
作者：
Sergeev, A. P. [1 ]
Sergeev, P. B. [1 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2011年 / 38卷 / 10期
关键词：
MgF2; defects; induced absorption; individual bands; electron beam;
D O I：
10.3103/S1068335611100010
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Decomposition of the induced absorption spectra of a MgF2 crystal into individual bands made it possible to construct the dependences of their intensity, and hence, the intrinsic defect concentration, on the electron beam fluence (energy density). The features of these dependences and their possible consequences are analyzed.
引用
收藏
页码：283 / 286
页数：4
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