Dielectric and piezoelectric properties of relaxor Pb(Sc1/2Nb1/2)O3 thin films

被引：8
|
作者：
Kuh, BJ
Choo, WK
Brinkman, K
Damjanovic, D
Setter, N
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon, South Korea
[2] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, IMXLC, Ceram Lab, CH-1015 Lausanne, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 08期
关键词：
D O I：
10.1063/1.1604189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pure perovskite Pb(Sc1/2Nb1/2)O-3 thin films without pyrochlore phase were prepared by the sol-gel method on TiO2/Pt/TiO2/SiO2/Si substrates. Films exhibited (111) preferred orientation and columnar microstructure. Diffuse phase transitions with permittivity maximum decreasing in value and shifting toward higher temperature with increasing frequency and slim polarization-electric field hysteresis loops typical for relaxors were observed. The maximum field-induced piezoelectric d(33) coefficient measured with ac electric field of 14 kV/cm was 58 pm/V. The d(33)-dc electric field relation is virtually hysteresis free. (C) 2003 American Institute of Physics.
引用
收藏
页码：1614 / 1616
页数：3
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