Vertical structure p-type permeable metal-base organic transistors based on N,N′-diphentyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine

被引:22
|
作者
Huang, Jinying [1 ]
Yi, Mingdong [1 ]
Ma, Dongge [1 ]
Hummelgen, Ivo A. [2 ]
机构
[1] Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
[2] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2944880
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270. (C) 2008 American Institute of Physics.
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页数:3
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