Control of charging in resonant tunneling through InAs nanocrystal quantum dots

被引：43
|
作者：
Katz, D [1 ]
Millo, O
Kan, SH
Banin, U
机构：
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
[2] Hebrew Univ Jerusalem, Dept Phys Chem, IL-91904 Jerusalem, Israel
[3] Hebrew Univ Jerusalem, Farkas Ctr Light Induced Proc, IL-91904 Jerusalem, Israel
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期
关键词：
D O I：
10.1063/1.1382854
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied experimentally and modeled theoretically. When the tip is retracted, we observe resonant tunneling through the nanocrystal states without charging. Charging is regained upon reducing the tip-nanocrystal distance, making the junction more symmetric. The effect of voltage distribution between the junctions on the measured spectra is also discussed. (C) 2001 American Institute of Physics.
引用
收藏
页码：117 / 119
页数：3
相关论文
共 50 条
  • [21] In-plane and perpendicular tunneling through InAs quantum dots
    Schmidt, KH
    Versen, M
    Bock, C
    Kunze, U
    Reuter, D
    Wieck, AD
    PHYSICA E, 2000, 7 (3-4): : 425 - 429
  • [22] Singularities in magneto-tunneling through InAs quantum dots
    Hapke-Wurst, I
    Zeitler, U
    Frahm, H
    Jansen, AGM
    Haug, RJ
    Pierz, K
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (03): : 689 - 692
  • [23] Exchange interaction in InAs nanocrystal quantum dots
    Banin, U
    Lee, JC
    Guzelian, AA
    Kadavanich, AV
    Alivisatos, AP
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (04) : 559 - 567
  • [24] Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures
    Li, HW
    Wang, TH
    PHYSICA B, 2001, 304 (1-4): : 107 - 111
  • [25] Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
    Sun, Jie
    Jin, Peng
    Zhao, Chang
    Yu, Like
    Ye, Xiaoling
    Xu, Bo
    Chen, Yonghai
    Wang, Zhanguo
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (07) : G703 - G706
  • [26] Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy
    Ohno, Y
    Asaoka, K
    Kishimoto, S
    Maezawa, K
    Mizutani, T
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4332 - 4336
  • [27] Resonant tunneling through single InAs quantum dot at room temperature
    Lu, Wei
    Li, Tianxin
    Xiong, Dayuan
    Chen, Pingping
    Xia, Changsheng
    Liu, Zhaolin
    Chen, Xiaoshuang
    CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2006, : 529 - 529
  • [28] RESONANT INTERBAND TUNNELING THROUGH A 110 NM INAS QUANTUM WELL
    BERESFORD, R
    LUO, LF
    LONGENBACH, KF
    WANG, WI
    APPLIED PHYSICS LETTERS, 1990, 56 (06) : 551 - 553
  • [29] Geometric broadening in resonant tunneling through Si quantum dots
    Suckow, S.
    Berghoff, B.
    Kurz, H.
    PROCEEDINGS OF INORGANIC AND NANOSTRUCTURED PHOTOVOLTAICS, 2010, 2 (01): : 207 - 212
  • [30] Designed emitter states in resonant tunneling through quantum dots
    Bryllert, T
    Borgstrom, M
    Sass, T
    Gustafson, B
    Landin, L
    Wernersson, LE
    Seifert, W
    Samuelson, L
    APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2681 - 2683
12345