Influence of the electric field on the current instability in the hopping conductivity region

被引：0
|
作者：
Aladashvili, D. I. [1 ]
Adamia, Z. A. [1 ]
Adamia, A. Z. [1 ]
机构：
[1] Tbilisi State Univ, GE-0128 Tbilisi, Georgia
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 3 | 2008年 / 5卷 / 03期
关键词：
D O I：
10.1002/pssc.200777551
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dependence of the shape of current oscillations observed in the hopping conductivity region in a weakly compensated p-Si on the supply voltage applied to the sample is established. With increasing bias voltage the current pulse shape to form a hopping domain changes significantly. The change in the shape is ascribed to voltage redistribution in corresponding regions in the bulk of the crystal. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：782 / 784
页数：3
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