Linearization Technique of Low Power Opamps in CMOS FD-SOI Technologies

被引：0
|
作者：
Kuzmicz, Wieslaw [1 ]
机构：
[1] Warsaw Univ Technol, Fac Elect & Informat Technol, Inst Microelect & Optoelect, PL-00661 Warsaw, Poland
来源：
ELECTRONICS | 2021年 / 10卷 / 15期
关键词：
CMOS analog integrated circuit; FD-SOI; feedback; linearity; operational amplifier;
D O I：
10.3390/electronics10151800
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Negative feedback applied to the back gate of MOS devices available in FD-SOI (fully depleted silicon on insulator) CMOS technologies can be used to improve the linearity of operational amplifiers. Two operational amplifiers designed and fabricated in a 22 nm FD-SOI technology illustrate this technique, as well as its advantages and limitations.
引用
收藏
页数：12
相关论文
共 50 条
  • [41] Two Wilkinson-Power-Combiners designed with Transmission Lines and Lumped Elements in 22 nm FD-SOI CMOS
    Xu, Xin
    Wagner, Jens
    Ellinger, Frank
    2023 IEEE RADIO AND ANTENNA DAYS OF THE INDIAN OCEAN, RADIO, 2023,
  • [42] Designing a Power and Speed Adaptive 60 GHz Receiver in 22 nm FD-SOI CMOS for Tactile Internet Applications
    Morath, Helmuth P. E.
    An, Xin
    Jobst, Matthias
    Cui, Mengqi
    Wagner, Jens
    Mayr, Christian
    Ellinger, Frank
    IEEE ACCESS, 2024, 12 : 153409 - 153420
  • [43] Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies
    Labrot, M.
    Cheynis, F.
    Barge, D.
    Maury, P.
    Juhel, M.
    Lagrasta, S.
    Mueller, P.
    MICROELECTRONIC ENGINEERING, 2017, 180 : 56 - 64
  • [44] The case of using CMOS FD-SOI rather than CMOS bulk to harden ICs against laser attacks
    Dutertre, Jean-Max
    Beroulle, Vincent
    Candelier, Philippe
    Faber, Louis-Barthelemy
    Flottes, Marie-Lise
    Gendrier, Philippe
    Hely, David
    Leveugle, Regis
    Maistri, Paolo
    Di Natale, Giorgio
    Papadimitriou, Athanasios
    Rouzeyre, Bruno
    2018 IEEE 24TH INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS 2018), 2018, : 214 - 219
  • [45] Scaling mixed-signal neuromorphic processors to 28 nm FD-SOI technologies
    Qiao, Ning
    Indiveri, Giacomo
    PROCEEDINGS OF 2016 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS), 2016, : 552 - 555
  • [46] Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration
    Galy, P.
    Lemyre, J. Camirand
    Lemieux, P.
    Arnaud, F.
    Drouin, D.
    Pioro-Ladriere, M.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 594 - 600
  • [47] A Stacked Segmented Adaptive Power Amplifier in 22nm FD-SOI
    Banerjee, Aritra
    van Liempd, Barend
    Wambacq, Piet
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (08) : 983 - 986
  • [48] Power management through DVFS and dynamic body biasing in FD-SOI circuits
    Akgul, Yeter
    Puschini, Diego
    Lesecq, Suzanne
    Beigne, Edith
    Miro-Panades, Ivan
    Benoit, Pascal
    Torres, Lionel
    2014 51ST ACM/EDAC/IEEE DESIGN AUTOMATION CONFERENCE (DAC), 2014,
  • [49] Performance Analysis of Fully Depleted SOI Tapered Body Reduced Source (FD-SOI TBRS) MOSFET for Low Power Digital Applications
    Mishra, Vimal Kumar
    Chauhan, R. K.
    PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON FRONTIERS IN INTELLIGENT COMPUTING: THEORY AND APPLICATIONS, (FICTA 2016), VOL 2, 2017, 516 : 361 - 368
  • [50] Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter
    Lee, Kang Hee
    Kim, Mincheol
    Lee, Jongmin
    Kim, Jang Hyun
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2025, 13 : 41 - 48
12345