Deformation of silicon surfaces

Processing of semiconductors, including machining, grinding, or polishing, involves thermomechanical deformation of a thin surface layer, thus coupling temperature and stress fields. Si, Ge, and other Ill-V semiconductors, exhibit complex constitutive laws coupling mechanical deformation with an evolving microstructure, typically dislocation density or coordination number. Irreversible shear flow and phase transitions are induced by combined stresses and temperatures. We discuss constitutive laws applicable to the machining of silicon.