A Synchrotron Radiation X-ray Photoemission Spectroscopy Study of n-Propyltriethoxysilane Adsorption on Si(001)-2 x 1 at Room Temperature

被引：5

作者：

Gallet, J. -J. ^{[1
]}

Bournel, F. ^{[1
]}

Pierucci, D. ^{[1
]}

Bonato, M. ^{[1
]}

Khaliq, A. ^{[1
]}

Rochet, F. ^{[1
]}

Silly, M. ^{[2
]}

Sirotti, F. ^{[2
]}

机构：

[1] Univ Paris 06, CNRS, Lab Chim Phys Matiere & Rayonnement, UMR 7614, F-75231 Paris 05, France

[2] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 49期

关键词：

LEVEL PHOTOELECTRON-SPECTROSCOPY; SI; 2P; CORE-LEVEL; ORGANIC-CHEMISTRY; SILICON SURFACES; DECOMPOSITION; MONOLAYERS; ACETYLENE; ETHYLENE; GROWTH;

D O I：

10.1021/jp106343t

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reaction of n-propyltriethoxysilane (PTES) with clean Si(001)-2 x 1 at room temperature is studied by synchrotron radiation X-ray photoemission spectroscopy (XPS). It is shown that PTES dissociatively adsorbs on the surface via the scission of at least two Si-O bonds. Adsorbate geometries are proposed accounting for the XPS data, and possible reaction paths are discussed, considering the zwitterionic nature of the surface silicon dimers. The understanding of the reactivity of the triethoxysilane termination on clean silicon paves the way to its possible use as an anchoring unit enabling the grafting of complex multifunctional molecules.

引用

页码：21450 / 21456

页数：7

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