Measuring nanowire thermal conductivity at high temperatures

This work extends the micro-thermal-bridge method for thermal conductivity measurements of nanowires to high temperatures. The thermal-bridge method, based on a microfabricated device with two side-by-side suspended membranes with integrated platinum resistance heaters/thermometers, has been used to determine thermal conductivity of various nanowires/nanotubes/nanoribbons at relatively low temperatures. However, to date, thermal conductivity characterization of nanowires at temperatures above 600 K has seldom been reported presumably due to several technical difficulties including the instability of the microfabricated thermometers, radiation heat loss, and the effect of the background conductance on the measurement. Here we report on our attempt to address the aforementioned challenges and demonstrate thermal conductivity measurement of boron nanoribbons up to 740 K. To eliminate high temperature resistance instability, the device is first annealed at 1023 K for 5 min in an argon atmosphere. Two radiation shields are installed in the measurement chamber to minimize radiation heat loss from the measurement device to the surroundings; and the temperature of the device at each set point is calibrated by an additional thermocouple directly mounted on the chip carrier. The effect of the background conductance is eliminated by adopting a differential measurement scheme. With all these modifications, we successfully measured the thermal conductivity of boron nanoribbons over a wide temperature range from 27 K to 740 K. The measured thermal conductivity increases monotonically with temperature and reaches a plateau of similar to 2.5 W m(-1) K-1 at approximately 400 K, with no clear signature of Umklapp scattering observed in the whole measurement temperature range.