GaAs, MOS, bipolar vie for power applications

被引：0

|

作者：

Heftman, G

机构：

来源：

MICROWAVES & RF | 1998年 / 37卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：31 / +

页数：5

相关论文

共 50 条

[41] CMOS MULTIPLIERS VIE FOR BIPOLAR AND NMOS SOCKETS
不详
ELECTRONIC PRODUCTS MAGAZINE, 1982, 25 (09): : 24 - 24
[42] AlGaAs/GaAs heterojunction bipolar transistors - The device technology and circuit applications
Ishibashi, T
Nakajima, O
Nagata, K
Yamauchi, Y
Ito, H
Sugahara, H
NTT REVIEW, 1996, 8 (06): : 32 - 38
[43] GaAs and silicon vie for emerging wireless markets
Sullivan, J
Browne, J
MICROWAVES & RF, 1996, 35 (10) : 30 - &
[44] GAAS, SILICON VIE FOR ROLE IN OPTICAL INTERCONNECT
WILSON, R
COMPUTER DESIGN, 1988, 27 (01): : 24 - 24
[45] InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
Liu, Xiang
Yuan, Jiann S.
Liou, Juin J.
MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) : 1212 - 1215
[46] Reduced power consumption in GaAs-based bipolar cascade lasers
Siskaninetz, WJ
Ehret, JE
Dang, TN
Van Nostrand, JE
Lott, JA
Nelson, TR
ELECTRONICS LETTERS, 2002, 38 (21) : 1259 - 1261
[47] BIPOLAR-FET COMBINATIONAL POWER TRANSISTORS FOR POWER CONVERSION APPLICATIONS
CHEN, DY
CHIN, SA
IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 1984, 20 (05) : 659 - 664
[48] Silicon MOS controlled bipolar power switching devices using trench technology
Trajkovic, T
Udrea, F
Amaratunga, GAJ
Milne, WI
Chan, SSM
Waind, PR
Thomson, J
Crees, DE
INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (10) : 1153 - 1168
[49] SOME ASPECTS IN THE DESIGN OF DISCRETE MOS-BIPOLAR DARLINGTON POWER SWITCHES
BISWAS, SK
BASAK, B
CONFERENCE RECORD OF THE 1989 IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, PTS 1-2, 1989, : 1211 - 1216
[50] SOME ASPECTS IN THE DESIGN OF DISCRETE MOS-BIPOLAR DARLINGTON POWER SWITCHES
BISWAS, SK
BASAK, B
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1991, 27 (02) : 340 - 345

← 1 2 3 4 5 →