Hydrogen-implantation induced blistering and layer transfer of LaAlO3 and sapphire

被引：12
|
作者：
Huang, LJ [1 ]
Tong, QY
Gösele, U
机构：
[1] Duke Univ, Sch Engn, Durham, NC 27708 USA
[2] Res Triangle Inst, Res Triangle Pk, NC 27708 USA
[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 05期
关键词：
D O I：
10.1149/1.1390796
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Blistering and splitting in hydrogen-implanted single crystalline LaAlO3 and Al2O3 are demonstrated based on the Smart-Cut(R) method with optimal implantation temperature and hydrogen dose. Thin layers of monocrystalline LaAlO3 and sapphire were transferred onto target substrates. This approach may have significant potential in fabricating new materials combinations such as monocrystalline superconductor thin films on semiconductor substrates. (C) 1999 The Electrochemical Society. S1099-0062(98)-12-062-X. All rights reserved.
引用
收藏
页码：238 / 239
页数：2
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