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Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions
被引:34
|作者:
Halley, D.
[1
]
Majjad, H.
[1
]
Bowen, M.
[1
]
Najjari, N.
[1
]
Henry, Y.
[1
]
Ulhaq-Bouillet, C.
[1
]
Weber, W.
[1
]
Bertoni, G.
[2
,3
]
Verbeeck, J.
[3
]
Van Tendeloo, G.
[3
]
机构:
[1] CNRS, ULP, UMR 7504, IPCMS, F-67034 Strasbourg 2, France
[2] Fdn Ist Italiano Tecnol IIT, IT-16163 Genoa, Italy
[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
关键词:
D O I:
10.1063/1.2938696
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Hysteretic resistance switching is observed in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1 V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission. (c) 2008 American Institute of Physics.
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