Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions

被引：34
|
作者：
Halley, D. [1 ]
Majjad, H. [1 ]
Bowen, M. [1 ]
Najjari, N. [1 ]
Henry, Y. [1 ]
Ulhaq-Bouillet, C. [1 ]
Weber, W. [1 ]
Bertoni, G. [2 ,3 ]
Verbeeck, J. [3 ]
Van Tendeloo, G. [3 ]
机构：
[1] CNRS, ULP, UMR 7504, IPCMS, F-67034 Strasbourg 2, France
[2] Fdn Ist Italiano Tecnol IIT, IT-16163 Genoa, Italy
[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 21期
关键词：
D O I：
10.1063/1.2938696
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hysteretic resistance switching is observed in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1 V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission. (c) 2008 American Institute of Physics.
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页数：3
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