Electrically active defects in SiC Schottky barrier diodes

被引：1

作者：

Gelczuk, Lukasz ^{[1
]}

Dabrowska-Szata, Maria ^{[1
]}

Synowiec, Zdzislaw ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

MATERIALS SCIENCE-POLAND | 2011年 / 29卷 / 01期

关键词：

SiC; Schottky diode; deep-level defect; DLTS; EXTENDED DEFECTS; DLTS; EMISSION; TRAPS; POINT; GAAS;

D O I：

10.2478/s13536-011-0012-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29-0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).

引用

页码：70 / 75

页数：6

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