Position annihilation characteristics in Zn1-xMgxSe mixed crystals

被引:0
|
作者
Firszt, F
Szatkowski, J
Meczynska, H
Legowski, S
Saarinen, K
Hautojarvi, P
Plazaola, A
Reniewicz, H
Dobrzynski, L
Chabik, S
机构
[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland
[2] Helsinki Univ Technol, Phys Lab, FIN-02150 Espoo, Finland
[3] Euskal Herriko Univ, Elekt & Elekt Saila, Bilbao 48080, Spain
[4] Univ Bialystok, Inst Phys, PL-15424 Bialystok, Poland
[5] Soltan Inst Nucl Studies, PL-05400 Otwock, Poland
[6] Opole Univ, Inst Phys, PL-45052 Opole, Poland
关键词
D O I
10.12693/APhysPolA.94.300
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Positron annihilation characteristics as a function of composition and annealing in zinc vapour were measured and compared with photoluminescence spectra for Zn1 - xMgxSe mixed crystals with 0 less than or equal to x less than or equal to 0.6. The positron annihilation data show that there is a substantial number of divacancies present in the system under study. The concentration of such defects is reduced at least by the factor of two upon annealing in zinc vapour.
引用
收藏
页码:300 / 304
页数:5
相关论文
共 50 条
  • [41] Auger depth profile analysis and photoluminescence investigations of Zn1-xMgxSe alloys
    Bukaluk, A
    Trzcinski, A
    Firszt, F
    Legowski, S
    Meczynska, H
    SURFACE SCIENCE, 2002, 507 : 175 - 180
  • [42] CRYSTAL-STRUCTURE AND RAMAN-SCATTERING IN ZN1-XMGXSE ALLOYS
    HUANG, DM
    JIN, CX
    WANG, DH
    LIU, XH
    WANG, J
    WANG, X
    APPLIED PHYSICS LETTERS, 1995, 67 (24) : 3611 - 3613
  • [43] Structural investigations of polytypes in Zn1-xMgxSe by transmission electron microscopy and cathodoluminescence
    Falke, U
    Cichos, A
    Firszt, F
    Meczynska, H
    Dluzewski, P
    Paszkowicz, W
    Lenzner, J
    Hietschold, M
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1015 - 1020
  • [44] Raman analysis of Zn1-xMgxSe layers grown on GaAs and ZnTe substrates
    Renucci, MA
    Frandon, J
    Glowacki, G
    Gapinski, A
    Rozploch, F
    Bala, W
    ACTA PHYSICA POLONICA A, 1996, 90 (05) : 1065 - 1069
  • [45] Predicted electronic properties of zinc-blende Zn1-xMgxSe alloys
    Charifi, Z
    Baaziz, H
    Bouarissa, N
    MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (2-3) : 273 - 278
  • [46] Conduction-and valence band offsets of Zn1-xMgxSe/Zn1-yMgySe heterointerfaces
    Al-Hagan, O. A.
    Bouarissa, N.
    Gueddim, A.
    Algarni, H.
    Alhuwaymel, T. F.
    Khan, M. Ajmal
    PHYSICA B-CONDENSED MATTER, 2018, 543 : 54 - 59
  • [47] Localization of excited carriers in Zn1-xMgxSe and Zn1-x-yMgxCdySe solid solutions
    Firszt, F.
    Legowski, S.
    Meczynska, H.
    Huang, C. T.
    Hsu, H. P.
    Huang, Y. S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) : 13 - 18
  • [48] Density functional theory study on the origins of the gap bowing in Zn1-xMgxSe
    Zaoui, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (15) : 4025 - 4033
  • [49] Structural and electronic properties of wide band gap Zn1-xMgxSe alloys
    Pelucchi, E
    Rubini, S
    Bonanni, B
    Franciosi, A
    Zaoui, A
    Peressi, M
    Baldereschi, A
    De Salvador, D
    Berti, M
    Drigo, A
    Romanato, F
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) : 4184 - 4192
  • [50] Photoluminescence properties of Zn1-xMgxSe on tilted GaAs substrates by molecular beam epitaxy
    Tu, RC
    Su, YK
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 464 - 467