Electron-beam induced current profiles for thin film heterojunction analysis

被引：0
|
作者：
Scheer, R
机构：
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY | 1996年 / 51-5卷
关键词：
solar cell; EBIC; diffusion length; collection efficiency; back surface recombination;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The application of the electron-beam induced current (EBIC) method on thin film heterojunction solar cells is discussed. The aim is to extract the depth dependent collection probability for a cell which is a unique function for electron and light generated charge carriers. Using the formalism of Donolato, current vs primary electron energy profiles for the planar EBIC configuration can be simulated which include the effect of back-surface recombination and back scattering of primary electrons at the back contact. As experimental examples EBIC profiles from different chalcopyrite heterojunction solar cells are presented.
引用
收藏
页码：527 / 532
页数：6
相关论文
共 50 条
  • [31] ENERGY DISSIPATION IN A THIN POLYMER FILM BY ELECTRON-BEAM SCATTERING - EXPERIMENT
    HAWRYLUK, RJ
    SMITH, HI
    SOARES, A
    HAWRYLUK, AM
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2528 - 2537
  • [32] ELECTRON-BEAM TRIMMING OF THIN AND THICK-FILM RESISTOR NETWORKS
    SCHILLER, S
    HEISIG, U
    PANZER, S
    SOLID STATE TECHNOLOGY, 1975, 18 (07) : 38 - 44
  • [33] Electron-Beam-Induced Current Measurements of Thin-Film Solar Cells
    Abou-Ras, Daniel
    Kirchartz, Thomas
    ACS APPLIED ENERGY MATERIALS, 2019, 2 (09) : 6127 - 6139
  • [34] HIGH SPATIAL-RESOLUTION ELECTRON-BEAM INDUCED CURRENT
    MAURICE, JL
    REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (06): : 153 - 153
  • [35] INFLUENCE OF THE INJECTION ON THE ELECTRON-BEAM INDUCED CURRENT COLLECTION EFFICIENCY
    MEKKI, DE
    TARENTO, RJ
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 71 - 74
  • [36] HIGH-CURRENT DENSITY ELECTRON-BEAM INDUCED DESORPTION
    BERGER, SD
    MACAULAY, JM
    BROWN, LM
    ALLEN, RM
    LASER- AND PARTICLE-BEAM CHEMICAL PROCESSES ON SURFACES, 1989, 129 : 515 - 520
  • [37] QUANTITATIVE CHARACTERIZATION OF SEMICONDUCTOR DEFECTS BY ELECTRON-BEAM INDUCED CURRENT
    DONOLATO, C
    POINT AND EXTENDED DEFECTS IN SEMICONDUCTORS, 1989, 202 : 225 - 241
  • [38] ELECTRON-BEAM INDUCED CURRENT IN BIASED MOS-TRANSISTORS
    HIEKE, EK
    TIHANYI, J
    SOLID-STATE ELECTRONICS, 1979, 22 (02) : 221 - &
  • [39] CONTROL OF WELD PENETRATION DEPTH BY ELECTRON-BEAM CURRENT IN ELECTRON-BEAM WELDING
    IRIE, H
    HASHIMOTO, T
    INAGAKI, M
    TRANSACTIONS OF NATIONAL RESEARCH INSTITUTE FOR METALS, 1984, 26 (04): : 297 - 304
  • [40] MODULATING BEAM CURRENT IN ELECTRON-BEAM GUNS
    DOSTANKO, AP
    DUDKO, GV
    KOBLASH, AA
    AUTOMATIC WELDING USSR, 1967, 20 (12): : 71 - &
12345