Electron-beam induced current profiles for thin film heterojunction analysis

The application of the electron-beam induced current (EBIC) method on thin film heterojunction solar cells is discussed. The aim is to extract the depth dependent collection probability for a cell which is a unique function for electron and light generated charge carriers. Using the formalism of Donolato, current vs primary electron energy profiles for the planar EBIC configuration can be simulated which include the effect of back-surface recombination and back scattering of primary electrons at the back contact. As experimental examples EBIC profiles from different chalcopyrite heterojunction solar cells are presented.