Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography

被引：7

作者：

Wang, Mingxing ^{[1
]}

Lee, Cheng-Tsung ^{[2
]}

Henderson, Clifford L. ^{[2
]}

Yueh, Wang ^{[3
]}

Roberts, Jeanette M.

Gonsalves, Kenneth E. ^{[1
]}

机构：

[1] Univ N Carolina, Polymer Nanotechnol Lab, Ctr Optoelect & Opt Commun, Charlotte, NC 28223 USA

[2] Georgia Inst Technol, Atlanta, GA 30332 USA

[3] Intel Corp, Hillsboro, OR 97124 USA

来源：

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2 | 2008年 / 6923卷

关键词：

anionic photoacid generators; polymer resistst; e-beam; EUV; LER;

D O I：

10.1117/12.769004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new series of methacrylate substituted benzene sulfonic photoacid generators (PAGs) and a perfluoro alkanesulfonic PAG, bound polymeric resists based on hydroxystyrene (HS) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid yield of these PAG bound polymer resists was among the range of 54-81% under deep ultraviolet exposure (254 nm) that agrees well with the electron withdrawing effect of the substituents on the PAG anion for enhancing acid generation efficiency. The intrinsic lithography performance of these polymer-bound PAG resists showed sub-50 nm half-pitch resolution and < 5 nm LER (3 sigma).

引用

页数：7

共 50 条

[21] Synthesis, characterization and lithography performance of novel anionic photoacid generator (PAG) bound polymers
Wang, Mingxing
Tang, Mingzhen
Her, Tsing-Hua
Yueh, Wang
Gonsalves, Kenneth E.
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2007, 20 (06) : 793 - 797
[22] Development of an Inorganic Nanoparticle Photoresist for EUV, E-beam and 193 nm Lithography
Krysak, Marie
Trikeriotis, Markos
Schwartz, Evan
Lafferty, Neal
Xie, Peng
Smith, Bruce
Zimmerman, Paul
Montgomery, Warren
Giannelis, Emmanuel
Ober, Christopher K.
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVIII, 2011, 7972
[23] Organosilicate polymer e-beam resists with high resolution, sensitivity and stability
Lee, Sung-Il
Sim, Jae Hwan
Lee, Hae-Jeong
Kasica, Richard
Kim, Hyun-Mi
Soles, Christopher L.
Kim, Ki-Bum
Yoon, Do Y.
APPLIED ORGANOMETALLIC CHEMISTRY, 2013, 27 (11) : 644 - 651
[24] New microscopic approach to e-beam lithography simulation
Sidorov, Fedor
Rogozhin, Alexander
2020 VI INTERNATIONAL CONFERENCE ON INFORMATION TECHNOLOGY AND NANOTECHNOLOGY (IEEE ITNT-2020), 2020,
[25] High refractive-index resists composed of anionic photoacid generator (PAG) bound polymers for 193 nm immersion lithography
Gonsalves, Kenneth E.
Wang, Mingxing
Pujari, Narahari S.
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
[26] Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography
Singh, Vikram
Satyanarayana, Vardhineedi Sri Venkata
Batina, Nikola
Morales Reyes, Israel
Sharma, Satinder K.
Kessler, Felipe
Scheffer, Francine R.
Weibel, Daniel E.
Ghosh, Subrata
Gonsalves, Kenneth E.
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2014, 13 (04):
[27] Newly developed polymer bound photoacid generator resist for sub-100 nm pattern by EUV lithography
Gonsalves, KE
Thiyagarajan, M
Dean, K
Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 771 - 777
[28] Synthesis of Novel Photoacid Generator Containing Resist Polymer for Electron Beam Lithography
Lee, Koh Eun
Kim, Min Jeong
Yoo, Jae Beom
Mondkar, Hemant S.
Sohn, Kyunghwa
Lee, Haiwon
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (01) : 725 - 729
[29] New diffractive beam shaper generated with the aid of e-beam lithography
Golub, MA
Duparre, M
Kley, EB
Kowarschik, R
Ludge, B
Rockstroh, W
Fuchs, HJ
OPTICAL ENGINEERING, 1996, 35 (05) : 1400 - 1406
[30] Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication
Kumar, Anil T., V
Shy, S. L.
Sheu, Gene
Yang, Shao-Ming
Chen, M. C.
Hong, C. S.
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VII, 2015, 9423

← 1 2 3 4 5 →