SINGLE EVENT TRANSIENTS' INVESTIGATION IN MODERN FPGA CIRCUITS

被引:0
|
作者
Sorokoumov, G. S. [1 ]
Bobrovskiy, D. V. [1 ]
Chumakov, A. I. [1 ]
机构
[1] Natl Res Nucl Univ MEPhI, Specialized Elect Syst SPELS, Moscow, Russia
关键词
heavy ions; laser; SET; SEE; TMR; chain of inverters; FPGA; RADIATION;
D O I
暂无
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Experimental results of single event transients in FPGA under ion and focused laser beam irradiation are presented. Abnormal time duration of single event transients in FPGA under ion beam was observed.
引用
收藏
页码:423 / 426
页数:4
相关论文
共 50 条
  • [11] Accurate and efficient analysis of single event transients in VLSI circuits
    Reorda, MS
    Violante, M
    9TH IEEE INTERNATIONAL ON-LINE TESTING SYMPOSIUM, PROCEEDINGS, 2003, : 101 - 105
  • [12] A New Approach to the Analysis of Single Event Transients in VLSI Circuits
    M. Sonza Reorda
    M. Violante
    Journal of Electronic Testing, 2004, 20 : 511 - 521
  • [13] Mitigation of single-event transients in CMOS digital circuits
    Mongkolkachit, P
    Bhuva, B
    Boulghassoul, Y
    Rowe, J
    Massengill, L
    PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2004, 536 : 335 - 340
  • [14] An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits
    Jung, Seungwoo
    Lourenco, Nelson E.
    Song, Ickhyun
    Oakley, Michael A.
    England, Troy D.
    Arora, Rajan
    Cardoso, Adilson S.
    Roche, Nicolas J. -H.
    Khachatrian, Ani
    McMorrow, Dale
    Buchner, Stephen P.
    Melinger, Joseph S.
    Warner, Jeffrey H.
    Paki-Amouzou, Pauline
    Babcock, Jeff A.
    Cressler, John D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 3193 - 3200
  • [15] An infrastructure for accurate characterization of single-event transients in digital circuits
    Veeravalli, Varadan Savulimedu
    Polzer, Thomas
    Schmid, Ulrich
    Steininger, Andreas
    Hofbauer, Michael
    Schweiger, Kurt
    Dietrich, Horst
    Schneider-Hornstein, Kerstin
    Zimmermann, Horst
    Voss, Kay-Obbe
    Merk, Bruno
    Hajek, Michael
    MICROPROCESSORS AND MICROSYSTEMS, 2013, 37 (08) : 772 - 791
  • [16] Modeling the sensitivity of CMOS circuits to radiation induced single event transients
    Wirth, Gilson I.
    Vieira, Michele G.
    Neto, Egas H.
    Kastensmidt, Fernanda Lima
    MICROELECTRONICS RELIABILITY, 2008, 48 (01) : 29 - 36
  • [17] Accurate and computer efficient modelling of single event transients in CMOS circuits
    Wirth, G. I.
    Vieira, M. G.
    Kastensmidt, F. G. Lima
    IET CIRCUITS DEVICES & SYSTEMS, 2007, 1 (02) : 137 - 142
  • [18] A new approach to estimate the effect of single event transients in complex circuits
    Aguirre, M. A.
    Baena, V.
    Tombs, J.
    Violante, M.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (04) : 1018 - 1024
  • [19] Investigation of Single-Event Transients in Linear Voltage Regulators
    Irom, Farokh
    Miyahira, Tetsuo F.
    Adel, Philippe C.
    Laird, Jamie S.
    Conder, Brandon
    Pouget, Vincent
    Essely, Fabien
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) : 3352 - 3359
  • [20] Critical charge for single-event transients (SETs) in bipolar linear circuits
    Pease, RL
    Sternberg, A
    Massengill, L
    Schrimpf, R
    Buchner, S
    Savage, M
    Titus, J
    Turflinger, T
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 1966 - 1972