High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

被引：25
|
作者：
Wang, Yong [1 ,3 ]
Wang, Tianbo [1 ,3 ]
Liu, Guangyu [1 ,3 ]
Guo, Tianqi [1 ,3 ]
Li, Tao [1 ,3 ]
Lv, Shilong [1 ]
Cheng, Yan [1 ,4 ]
Song, Sannian [1 ]
Ren, Kun [1 ,2 ]
Song, Zhitang [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Zhejiang, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] East China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China
来源：
SCRIPTA MATERIALIA | 2019年 / 164卷
基金：
中国国家自然科学基金;
关键词：
High thermal stability; Fast speed; Ge-Sb-Te alloys; Phase change memory; GE2SB2TE5; FILMS;
D O I：
10.1016/j.scriptamat.2019.01.035
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge2Sb1Te2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 degrees C, and good endurance of 6x10(5) cycles have made Sc0.2Ge2Sb1Te2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：25 / 29
页数：5
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