Ultra low phase noise C and X band bipolar transistors dielectric resonator oscillators

被引：11

作者：

Regis, M ^{[1
]}

Llopis, O ^{[1
]}

Van Haaren, B ^{[1
]}

Plana, R ^{[1
]}

Gruhle, A ^{[1
]}

Rayssac, J ^{[1
]}

Graffeuil, J ^{[1
]}

机构：

[1] CNRS, LAAS, F-75700 Paris, France

来源：

PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/FREQ.1998.717946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a comparison between Silicon BJT and SiGe HBT devices for ultra low phase noise dielectric resonator microwave oscillators design at 4.7 GHz and 10.2 GHz is presented. Different oscillators topologies have been realized and characterized. The best measured phase noise have been achieved with the SiGe HBT devices. At C band, the best phase noise level is below -135 dBc/Hz at 10 kHz offset frequency and, at X band a value of -118 dBc/Hz at 10 kHz offset frequency has been observed.

引用

页码：507 / 511

页数：5

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