Strain relaxation in graded SiGe grown by ultra-high vacuum chemical vapor deposition (UHVCVD)

被引：6
|
作者：
Wu, HZ [1 ]
Huang, JY
Ye, ZZ
Jiang, XB
Shou, X
Que, DL
机构：
[1] Hangzhou Univ, Dept Phys, Zhejiang 310028, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 191卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
strain relaxation; SiGe; ultra-high vacuum chemical vapor deposition;
D O I：
10.1016/S0022-0248(98)00026-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have used ultra-high vacuum chemical vapor deposition (UHVCVD) system to grow step-graded SiGe/Si structures with relatively high growth temperature (780 degrees C). By using the phenomenon of Ge segregation to the growing surface during epitaxial growth we realized almost a linear Ge content variation in the buffer layer. X-ray diffraction and Raman spectroscopy measurements show that the upper layer is totally relaxed and the relaxation ratio is equal to 1. However, the measured results show that the density of dislocation in the compositionally graded structure is much lower than that in single-step buffer structures. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：72 / 78
页数：7
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