In-situ observation of GaAs surface in high vacuum by contact angle measurement

被引：2

作者：

Matsushita, K ^{[1
]}

Monbara, T ^{[1
]}

Nakayama, K ^{[1
]}

Naganuma, H ^{[1
]}

Okuyama, S ^{[1
]}

Okuyama, K ^{[1
]}

机构：

[1] Yamagata Univ, Dept Elect Engn, Yonezawa, Yamagata 9928510, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 2001年 / 84卷 / 11期

关键词：

GaAs; Ga droplet; contact angle; wetting; surface state;

D O I：

10.1002/ecjb.1072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed an apparatus to measure the contact angle formed by a Ga droplet adhering to a GaAs substrate and the GaAs surface to understand the surface state of a GaAs substrate maintained at a substrate temperature in the range of 20 to 550 degreesC in a high vacuum. The following results were obtained by this apparatus. The contact angle of a Ga droplet on a GaAs(100) substrate with a grown oxide film had the value of 140 degrees in a vacuum independent of the substrate temperature and showed no variation in the wettability. The contact angle decreased as the wettability improved and the substrate temperature increased when the oxide film was removed. Furthermore, the degree of wetting depends on the surface orientation of the GaAs substrate. (C) 2001 Scripta Technica, Electron Comm Jpn Pt 2.

引用

页码：51 / 59

页数：9

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