In-situ observation of GaAs surface in high vacuum by contact angle measurement

被引：2
|
作者：
Matsushita, K [1 ]
Monbara, T [1 ]
Nakayama, K [1 ]
Naganuma, H [1 ]
Okuyama, S [1 ]
Okuyama, K [1 ]
机构：
[1] Yamagata Univ, Dept Elect Engn, Yonezawa, Yamagata 9928510, Japan
来源：
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 2001年 / 84卷 / 11期
关键词：
GaAs; Ga droplet; contact angle; wetting; surface state;
D O I：
10.1002/ecjb.1072
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed an apparatus to measure the contact angle formed by a Ga droplet adhering to a GaAs substrate and the GaAs surface to understand the surface state of a GaAs substrate maintained at a substrate temperature in the range of 20 to 550 degreesC in a high vacuum. The following results were obtained by this apparatus. The contact angle of a Ga droplet on a GaAs(100) substrate with a grown oxide film had the value of 140 degrees in a vacuum independent of the substrate temperature and showed no variation in the wettability. The contact angle decreased as the wettability improved and the substrate temperature increased when the oxide film was removed. Furthermore, the degree of wetting depends on the surface orientation of the GaAs substrate. (C) 2001 Scripta Technica, Electron Comm Jpn Pt 2.
引用
收藏
页码：51 / 59
页数：9
相关论文
共 50 条
  • [1] Observation of the contact formation of PV frontside pastes by in-situ contact resistance measurement
    Reinhardt, Kathrin
    Schmidt, Ulrike
    Koerner, Stefan
    Jurk, Robert
    Partsch, Uwe
    Eberstein, Markus
    PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2014), 2014, 55 : 702 - 707
  • [2] Probing cellular binding of dendrofullerene by in-situ electrochemical contact angle measurement
    Zhou Jian
    Zhang Ren-Yun
    Wu Chun-Hui
    Zhao Xue-Yan
    Zheng Li-Qiang
    Fu De-Gang
    Chen Bao-An
    Wang Xue-Mei
    CHINESE JOURNAL OF CHEMISTRY, 2008, 26 (01) : 116 - 120
  • [3] In-Situ Observation and In-Situ Measurement of Friction and Wear Processes
    Hiratsuka, Ken'ichi
    JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS, 2010, 55 (01) : 37 - 42
  • [4] Hydrophobicity of a hydrochloric-treated GaAs surface analyzed by contact angle measurement
    Yamagata Univ, Yonezawa, Japan
    J Electrochem Soc, 4 (1381-1384):
  • [5] Hydrophobicity of a hydrochloric-treated GaAs surface analyzed by contact angle measurement
    Matsushita, K
    Suzuki, N
    Okuyama, S
    Okuyama, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (04) : 1381 - 1384
  • [6] Reconstruction of an ultrahigh vacuum reflection electron microscope for in-situ high temperature observation
    Iida, Shin-Ichi
    Awata, Shogo
    Asahata, Tatsuya
    Nagatomi, Takaharu
    Kimura, Yoshihide
    Takai, Yoshizo
    Shimizu, Ryuichi
    Technology Reports of the Osaka University, 1999, 49 (2348): : 99 - 104
  • [7] IN-SITU OBSERVATION OF GAAS SELECTIVE EPITAXY ON GAAS (111)B SUBSTRATES
    ALLEGRETTI, F
    INOUE, M
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 354 - 358
  • [8] In-situ STM observation of GaAs surfaces after nitridation
    Makimoto, T
    Kasu, M
    Benchimol, JL
    Kobayashi, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B): : 1733 - 1735
  • [9] In-situ observation of solid contact state of sliding surface using ultrasonic echo technique
    Takeuchi, Akitoshi
    Toraibarojisuto/Journal of Japanese Society of Tribologists, 1996, 41 (05):
  • [10] In-situ observation of solid contact state of sliding surface using ultrasonic echo technique
    Takeuchi, A
    JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS, 1996, 41 (05) : 381 - 386
12345