Investigations of indium tin oxide - Barium strontium titanate-indium tin oxide heterostructure for tunability

被引：6
|
作者：
Al Ahmad, Mahmoud [1 ]
Salvagnac, Ludovic [1 ]
Michau, Dorninique [2 ]
Maglione, Mario [2 ]
Plana, Robert [1 ]
机构：
[1] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France
[2] Univ Bordeaux, CNRS, ICMCB, F-33608 Pessac, France
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 06期
关键词：
agile components; barium strontium titanate (BST); characterization; distributed tuning; indium tin oxide (ITO); matching circuits; material parameters; metamaterial; thin film; tunability; tunable circuit; tunable resistor;
D O I：
10.1109/LMWC.2008.922631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.
引用
收藏
页码：398 / 400
页数：3
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