GeOx interface layer reduction upon Al-gate deposition on a HfO2/GeOx/Ge(001) stack

被引：17
|
作者：
Rangan, Sylvie [1 ]
Bersch, Eric
Bartynski, Robert Allen
Garfunkel, Eric [2 ,3 ]
Vescovo, Elio [4 ]
机构：
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA
[3] Rutgers State Univ, Dept Chem & Biol Chem, Piscataway, NJ 08854 USA
[4] Brookhaven Natl Lab, Natl Synchrotron Light Source Dept, Upton, NY 11973 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2917480
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The metallization of HfO(2)/Ge by Al at room temperature was studied using photoemission and inverse photoemission. Upon deposition, Al reduces the GeO(x) interfacial layer between Ge and HfO(2), and a thin Al(2)O(3) layer is formed at the Al/HfO(2) interface. The band alignment across the Al/HfO(2)/Ge stacks is also addressed. (C) 2008 American Institute of Physics.
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页数：3
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