GeOx interface layer reduction upon Al-gate deposition on a HfO2/GeOx/Ge(001) stack

被引：17

作者：

Rangan, Sylvie ^{[1
]}

Bersch, Eric

Bartynski, Robert Allen

Garfunkel, Eric ^{[2
,3
]}

Vescovo, Elio ^{[4
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA

[3] Rutgers State Univ, Dept Chem & Biol Chem, Piscataway, NJ 08854 USA

[4] Brookhaven Natl Lab, Natl Synchrotron Light Source Dept, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2917480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The metallization of HfO(2)/Ge by Al at room temperature was studied using photoemission and inverse photoemission. Upon deposition, Al reduces the GeO(x) interfacial layer between Ge and HfO(2), and a thin Al(2)O(3) layer is formed at the Al/HfO(2) interface. The band alignment across the Al/HfO(2)/Ge stacks is also addressed. (C) 2008 American Institute of Physics.

引用

页数：3

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