High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates

被引：31
|
作者：
Luan, HC
Wada, K
Kimerling, LC
Masini, G
Colace, L
Assanto, G
机构：
[1] INFM, RM3, I-00146 Rome, Italy
[2] Univ Roma Tre, Dipartimento Ingn Elettron, I-00146 Rome, Italy
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期
关键词：
near infrared photodetectors; germanium; heteroepitaxy;
D O I：
10.1016/S0925-3467(01)00021-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrate Ge/Si heterojunction photodetectors based on high quality epitaxial germanium grown on silicon. Germanium deposited by ultra-high-vacuum chemical vapor deposition (UHV-CVD) undergoes thermal annealing cycles which reduce the number of dislocations and, thus, improve the overall quality. The photodetectors exhibit record responsivity of 0.55 A/W and a sub-ns photoresponse at 1.3 mum. We describe the fabrication process as well as a complete optoelectronic characterization of the devices. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：71 / 73
页数：3
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