Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

被引：17

作者：

Yang, J. ^{[1
,2
]}

Zhang, Y. H. ^{[1
]}

Zhao, D. G. ^{[1
,2
]}

Chen, P. ^{[1
]}

Liu, Z. S. ^{[1
]}

Liang, F. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2021年 / 570卷

基金：

国家重点研发计划; 芬兰科学院;

关键词：

A1; Defects; Optical microscopy; A3; Metalorganic chemical vapor deposition; B1; Nitrides; B2; Semiconducting III-V materials; GAN;

D O I：

10.1016/j.jcrysgro.2021.126245

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of resistivity for n-AlGaN is investigated by changing Si concentration, growth temperature and growth rate. It is found that the resistivity strongly depended on the growth conditions and it reaches to a small value of 5 x 10-3 omega cm at the growth temperature of 1040 degrees C. In addition, it is found that there is a strong correlation between the resistivity and the PL emission intensity of group-III-vacancy-Si (VIII-Si) complexes. It indicates that defect compensation can play a key role in high resistivity of n-AlGaN films.

引用

页数：5