Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 K

被引：12
|
作者：
Rincon, C [1 ]
Wasim, SM
Hernandez, E
Bacquet, G
机构：
[1] Univ Los Andes, Fac Ciencias, Dept Fis, Ctr Estudios Semicond, Merida, Venezuela
[2] Univ Zulia, Fac Ciencias Expt, Dept Fis, Maracaibo 4011, Venezuela
[3] Inst Natl Sci Appl, Phys Solides Lab, F-31077 Toulouse, France
来源：
MATERIALS LETTERS | 1998年 / 35卷 / 3-4期
关键词：
CuInTe2; ternary semiconductor; photoluminescence; excitation intensity; free and bound excitons; donor-acceptor pairs;
D O I：
10.1016/S0167-577X(97)00250-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence study as a function of excitation intensity has been performed in CuInTe2 at 4.2 K. From the analysis of the data, using the current theoretical models, all the emission lines observed in the PL spectra have been identified: These are due to free-exciton (1.053 eV), bound-excitons (1.047, 1.044, 1.040 and 1.030 eV), donor-to-acceptor (1.022 and 1.017 eV) and donor-to-valence band (1.033 eV) recombination processes. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：172 / 176
页数：5
相关论文
共 50 条
  • [21] Excitation intensity dependence of photoluminescence spectra in GaInNAs single quantum wells
    Shirakata, S
    Kondow, M
    Kitatani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4A): : 2082 - 2083
  • [22] Excitation intensity dependence of photoluminescence spectra in GaInNAs single quantum wells
    Shirakata, Sho
    Kondow, Masahiko
    Kitatani, Takeshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (04): : 2082 - 2083
  • [23] Band-edge photoluminescence of CuGaSe2 films grown by MBE
    Yamada, A.
    Makita, Y.
    Niki, S.
    Fons, P.J.
    Shibata, H.
    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 1996, 60 (03): : 73 - 78
  • [24] DEPENDENCE OF PEAK ENERGY OF PAIR-PHOTOLUMINESCENCE BAND ON EXCITATION INTENSITY
    ZACKS, E
    HALPERIN, A
    PHYSICAL REVIEW B, 1972, 6 (08): : 3072 - &
  • [25] Excitation-power dependence of the near-band-edge photoluminescence of ZnO inverse opals and nanocrystal films
    Yan, Hongwei
    Yang, Yingling
    Fu, Zhengping
    Yang, Beifang
    Zuo, Han
    Fu, Shengquan
    JOURNAL OF LUMINESCENCE, 2008, 128 (02) : 245 - 249
  • [26] Investigations on near band-edge optical excitation response in bulk ZnTe single crystals
    Priyanka
    Verma, Sudeep
    Pandey, Akhilesh
    Tanwar, Arun
    Sinha, Manish
    Kumari, Monika
    Verma, K. D.
    Raman, R.
    Srivastava, Meenakshi
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2024, 130 (02):
  • [27] Investigations on near band-edge optical excitation response in bulk ZnTe single crystals
    Sudeep Priyanka
    Akhilesh Verma
    Arun Pandey
    Manish Tanwar
    Monika Sinha
    K. D. Kumari
    R. Verma
    Meenakshi Raman
    Applied Physics A, 2024, 130
  • [28] Irradiation effects of 60Co γ-ray on the near band-edge photoluminescence (PL) of ZnSe
    Mochizuki, Katsumi
    Masumoto, Katashi
    1669, (27):
  • [29] NEAR BAND-EDGE PHOTOLUMINESCENCE FINE SPECTRA FROM SI-DOPED GAAS - A VERSATILE MEASUREMENT FOR THE ESTIMATION OF ELECTRON CARRIER CONCENTRATION
    OHNISHI, N
    MAKITA, Y
    MORI, M
    IRIE, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C578 - C578
  • [30] PHOTOCONDUCTIVITY INDUCED BY POLARITONS NEAR BAND-EDGE OF PBI2
    THANH, LC
    DEPEURSINGE, C
    LEVY, F
    HELVETICA PHYSICA ACTA, 1978, 51 (04): : 470 - 471
12345