Computer simulation of thermomigration process

被引：0
|
作者：
Gershanov, VY [1 ]
Garmashov, SI [1 ]
Minyaev, AR [1 ]
Beletskaya, AV [1 ]
机构：
[1] Rostov State Univ, Dept Phys, Rostov On Don 344090, Russia
来源：
SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING | 1998年 / 490卷
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Mathematical model of thermomigration of liquid inclusions through a crystal under stationary and non-stationary thermal conditions is presented. It is assumed that the mass-transfer is provided by diffusion only, the crystallization and dissolution processes are carried out in accordance with the diffuse interface mechanism for atomic-rough (non-singular) interfaces and screw-dislocation or two-dimension nucleation mechanisms for singular interfaces. The package of computer programs based on this model enables simulation of the evolution of the cross-sectional shape of cylindrical liquid inclusions. It is possible to simulate the cases of various inclusion sizes, various relationship between the interface and volume mass-transfer restrictions, various liquid phase composition, thermal gradient under stationary and non-stationary thermal conditions as well. The main results of the simulation are presented.
引用
收藏
页码：135 / 140
页数：6
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