Computer simulation of thermomigration process

被引：0

作者：

Gershanov, VY ^{[1
]}

Garmashov, SI ^{[1
]}

Minyaev, AR ^{[1
]}

Beletskaya, AV ^{[1
]}

机构：

[1] Rostov State Univ, Dept Phys, Rostov On Don 344090, Russia

来源：

SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING | 1998年 / 490卷

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Mathematical model of thermomigration of liquid inclusions through a crystal under stationary and non-stationary thermal conditions is presented. It is assumed that the mass-transfer is provided by diffusion only, the crystallization and dissolution processes are carried out in accordance with the diffuse interface mechanism for atomic-rough (non-singular) interfaces and screw-dislocation or two-dimension nucleation mechanisms for singular interfaces. The package of computer programs based on this model enables simulation of the evolution of the cross-sectional shape of cylindrical liquid inclusions. It is possible to simulate the cases of various inclusion sizes, various relationship between the interface and volume mass-transfer restrictions, various liquid phase composition, thermal gradient under stationary and non-stationary thermal conditions as well. The main results of the simulation are presented.

引用

页码：135 / 140

页数：6

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