On the origin of visible luminescence from SiO2 films containing Ge nanocrystals

被引：0
|
作者：
Min, KS [1 ]
Shcheglov, KV [1 ]
Yang, CM [1 ]
Camata, RP [1 ]
Atwater, HA [1 ]
Brongersma, ML [1 ]
Polman, A [1 ]
机构：
[1] CALTECH,THOMAS J WATSON LAB APPL PHYS,PASADENA,CA 91125
来源：
SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES | 1996年 / 405卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
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页码：247 / 252
页数：6
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