Boron centers in 4H-SiC

被引：23
|
作者：
Aradi, B
Gali, A
Deák, P
Rauls, E
Frauenheim, T
Son, NT
机构：
[1] Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary
[2] Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany
[3] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
boron; intrinsic defects; occupancy level;
D O I：
10.4028/www.scientific.net/MSF.353-356.455
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the acceptor. Now, ah initio LDA supercell calculations have been carried out for boron-related complexes to calculate the occupation levels in 4H-SiC. It has been found that the 0/- level for the B-Si+V-C complex lies in the upper half of the gap, therefore it can be disregarded as the origin of the "deep boron-related acceptor level". Investigating other feasible boron-related complexes, B-Si+Si-C appears to be the best candidate.
引用
收藏
页码：455 / 458
页数：4
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