Boron centers in 4H-SiC

被引：23

作者：

Aradi, B

Gali, A

Deák, P

Rauls, E

Frauenheim, T

Son, NT

机构：

[1] Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary

[2] Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany

[3] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

boron; intrinsic defects; occupancy level;

D O I：

10.4028/www.scientific.net/MSF.353-356.455

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the acceptor. Now, ah initio LDA supercell calculations have been carried out for boron-related complexes to calculate the occupation levels in 4H-SiC. It has been found that the 0/- level for the B-Si+V-C complex lies in the upper half of the gap, therefore it can be disregarded as the origin of the "deep boron-related acceptor level". Investigating other feasible boron-related complexes, B-Si+Si-C appears to be the best candidate.

引用

页码：455 / 458

页数：4

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