Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

被引：31

作者：

Zuo, Daniel ^{[1
]}

Liu, Runyu ^{[1
]}

Wasserman, Daniel ^{[1
]}

Mabon, James ^{[2
]}

He, Zhao-Yu ^{[3
,4
]}

Liu, Shi ^{[3
,4
]}

Zhang, Yong-Hang ^{[3
,4
]}

Kadlec, Emil A. ^{[5
]}

Olson, Benjamin V. ^{[5
]}

Shaner, Eric A. ^{[5
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

[4] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[5] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 07期

关键词：

INFRARED DETECTION;

D O I：

10.1063/1.4913312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 x 10(-2) cm(2)/s. We also report on the device's optical response characteristics at 78 K. (C) 2015 AIP Publishing LLC.

引用

页数：4

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