Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

被引：31
|
作者：
Zuo, Daniel [1 ]
Liu, Runyu [1 ]
Wasserman, Daniel [1 ]
Mabon, James [2 ]
He, Zhao-Yu [3 ,4 ]
Liu, Shi [3 ,4 ]
Zhang, Yong-Hang [3 ,4 ]
Kadlec, Emil A. [5 ]
Olson, Benjamin V. [5 ]
Shaner, Eric A. [5 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA
[4] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[5] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 07期
关键词：
INFRARED DETECTION;
D O I：
10.1063/1.4913312
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 x 10(-2) cm(2)/s. We also report on the device's optical response characteristics at 78 K. (C) 2015 AIP Publishing LLC.
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页数：4
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