Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor

This paper investigates the importance of overlap/underlap design of channel in Double Gate (DG) MOSFETs to improve Short Channel Effects (SCEs) and Gate Induced Drain Leakage (GIDL). A systematic study of GIDL is a very important analysis in DGMOSFET. Gate underlap architecture is useful to reduce the GIDL and improve the SCEs in DGMOSFET structure. The results show that steeper Source/Drain (S/D) doping gradients along with wider S/D roll-off width will be required for the device. In order to enhance short channel immunity, the ratio of S/D roll-off width to lateral straggle should be high for a wide range of SID doping gradients. This research provides innovative solution for realizing opportunity of very low power devices as well as circuits through underlap DGMOSFETs.