Dynamic model of three-dimensional cluster formation

被引：1
|
作者：
Mozhaev, A. V. [1 ]
Buchin, E. Yu.
Prokaznikov, A. V.
机构：
[1] Yaroslavl State Univ, Yaroslavl, Russia
[2] Russian Acad Sci, Inst Phys & Technol, Yaroslavl Branch, Yaroslavl, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 05期
关键词：
D O I：
10.1134/S1063785008050210
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A discrete three-dimensional model has been developed for the computer simulation of multistage processes involved in the formation of a porous space in semiconductor crystals anodized in a reactive medium. A related program package is created that provides the dynamic simulation of cluster formation in depth of a semiconductor crystal with allowance for the processes taking place on the surface, chemical reactions accompanying these processes, and applied external fields. The maximum fractal dimension of structures obtained using this algorithm within the framework of the proposed model is 2.68.
引用
收藏
页码：431 / 434
页数：4
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