Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells

被引：21

作者：

Eickhoff, M ^{[1
]}

Suter, D ^{[1
]}

机构：

[1] Univ Dortmund, Fachbereich Phys, D-44221 Dortmund, Germany

来源：

JOURNAL OF MAGNETIC RESONANCE | 2004年 / 166卷 / 01期

关键词：

ODNMR; pulsed excitation; quantum well; GaAs;

D O I：

10.1016/j.jmr.2003.09.009

中图分类号：

Q5 [生物化学];

学科分类号：

071010 ; 081704 ;

摘要：

While nuclear magnetic resonance (NMR) is one of the most important experimental tools for the analysis of bulk materials, the low sensitivity of conventional NMR makes it unsuitable for the investigation of small structures. We introduce an experimental scheme that makes NMR spectra of single, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding the spectral broadening associated with some alternative techniques. The scheme combines optical pumping and pulsed radiofrequency excitation of the nuclei with time-resolved detection of the free induction decay through the polarization of the photoluminescence. (C) 2003 Elsevier Inc. All rights reserved.

引用

页码：69 / 75

页数：7

共 50 条

[31] Quantum interference effect in GaAs/AlGaAs double quantum wells
Wang, XH
Yu, Q
Laiho, R
Li, CF
Liu, JA
Yang, XP
Zheng, HZ
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 372 - 375
[32] Resistively detected NMR with dispersive lineshape in single InSb quantum wells
Yang, K. F.
Liu, H. W.
Mishima, T. D.
Santos, M. B.
Nagase, K.
Hirayama, Y.
HORIBA INTERNATIONAL CONFERENCE: THE 19TH INTERNATIONAL CONFERENCE ON THE APPLICATION OF HIGH MAGNETIC FIELDS IN SEMICONDUCTOR PHYSICS AND NANOTECHNOLOGY, 2011, 334
[33] Comparison the gain characteristic of AllnGaAs/AlGaAs and GaAs/AlGaAs quantum wells
Gai, HX
Deng, J
Li, JJ
Shen, GD
Chen, JX
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 1685 - 1688
[34] Optically detected heavy- and light-hole anti-crossing in GaAs quantum wells under pulsed magnetic fields
Kim, Y
Lee, KS
Perry, CH
APPLIED PHYSICS LETTERS, 2004, 84 (05) : 738 - 740
[35] Ultraslow electron spin dynamics in GaAs quantum wells probed by optically pumped NMR
Kuzma, NN
Khandelwal, P
Barrett, SE
Pfeiffer, LN
West, KW
SCIENCE, 1998, 281 (5377) : 686 - 690
[36] Below-bandgap excited, terahertz emission of optically pumped GaAs/AlGaAs multiple quantum wells
Estacio, Elmer
Quema, Alex
Pobre, Romeric
Diwa, Gilbert
Ponseca, Carlito
Ono, Shingo
Murakami, Hidetoshi
Somintac, Armando
Sy, Joanes
Mag-usara, Valynn
Salvador, Arnel
Sarukura, Nobuhiko
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2006, 183 (03) : 334 - 337
[37] Optically detected impurity D-0 and D- transitions in GaAs quantum wells
Kono, J
Lee, ST
Salib, MS
Herold, GS
Petrou, A
McCombe, BD
SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 93 - 96
[38] DIRECTLY DETECTED NUCLEAR-MAGNETIC-RESONANCE OF OPTICALLY PUMPED GAAS QUANTUM-WELLS
BARRETT, SE
TYCKO, R
PFEIFFER, LN
WEST, KW
PHYSICAL REVIEW LETTERS, 1994, 72 (09) : 1368 - 1371
[39] Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wells
Bradley, I.V.
Gillin, W.P.
Homewood, K.P.
Grey, R.
Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1993, 80-81 (pt 2):
[40] Carrier dynamics in shallow GaAs/AlGaAs quantum wells
Lab. de Phys. de la Matiere Cond., Ecole Normale Supérieure, F-75005 Paris, France
不详
不详
Phys E, 1-4 (126-130):

← 1 2 3 4 5 →