Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

被引：42
|
作者：
Ranga, Praneeth [1 ]
Bhattacharyya, Arkka [1 ]
Rishinaramangalam, Ashwin [2 ]
Ooi, Yu Kee [1 ]
Scarpulla, Michael A. [1 ,3 ]
Feezell, Daniel [2 ]
Krishnamoorthy, Sriram [1 ]
机构：
[1] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[3] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 04期
关键词：
Delta Doping; Modulation Doping; gallium oxide; heterostructures; FIELD-EFFECT TRANSISTORS; SI; SEMICONDUCTORS; VOLTAGE; MOVPE;
D O I：
10.35848/1882-0786/ab7712
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown beta-Ga2O3 thin films using silane as a precursor. The delta-doped beta-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. The sheet charge density is in the range of 2.9 x 10(12) cm(-2) to 9 x 10(12) cm(-2) with an HWHM (towards the substrate) ranging from 3.5 nm to 6.2 nm. We also demonstrate a high-density (n(s): 6.4 x 10(12) cm(-2)) degenerate electron sheet charge in a delta-doped beta-(Al0.26Ga0.74)(2)O-3/beta-Ga2O3 heterostructure. The total charge could also include a contribution from a parallel channel in the beta-(Al0.26Ga0.74)(2)O-3 alloy barrier.
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页数：5
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