Catalyst-free growth of Sb2Te3 nanowires

被引：4
|
作者：
Kim, Byeong Geun [1 ]
Kim, Byung-Sung [2 ]
Jeong, Seong-Min [3 ]
Choi, Soon-Mok [3 ]
Whang, Dongmok [2 ]
Lee, Hong-Lim [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea
[3] KICET, Seoul 153801, South Korea
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 05期
关键词：
Nanocrystalline materials; Semiconductors; Sputtering; Thin films; GE2SB2TE5; FILMS; MEMORY;
D O I：
10.1016/j.matlet.2010.12.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, a catalyst-free growth method was discovered to prepare the high-quality single crystal Sb2Te3 nanowires from the Al:Ge:Sb:Te thin films. The diameters of Sb2Te3 nanowires were found to be similar to 100 nm and their lengths were as great as tens of micrometers. The Al content and the annealing temperature play an important role in the growth of Sb2Te3 nanowires. When the Al content (>12.4 at.%) was sufficiently contained in Al:Ge:Sb:Te film, Sb2Te3 nanowires were extruded spontaneously on the surface of thin film with increase in annealing temperatures. Compared with the vapor-liquid-solid method, our method has advantages of low temperature (similar to 300 degrees C) and no impurities, such as a metal catalyst. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：812 / 814
页数：3
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