Effects of Skyrmion excitations on the temperature dependence of diagonal resistivity at ν=1 quantum Hall regime

被引：0
|
作者：
Takamasu, T
Kido, G
Ohno, M
Miura, N
Endo, A
Kato, M
Katsumoto, S
Iye, Y
机构：
[1] Natl Res Inst Met, Ibaraki, Osaka 305, Japan
[2] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan
来源：
PHYSICA B | 1998年 / 246卷
关键词：
GaAs/AlGaAs heterostructure; two-dimensional electron system; quantum Hall effect; skyrmion;
D O I：
10.1016/S0921-4526(98)00018-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Temperature dependence of the diagonal resistivity rho(xx) was measured at v = 1 quantum Hall regime as a function of the total magnetic field. As a result of activation type fitting, we found that the high-temperature extrapolated value of the diagonal resistivity rho(0) depends on the total magnetic field. We discuss the temperature dependence of rho(0) in terms of skyrmion excitation using the Landauer-Buttiker-type edge channel model including the back-scattering. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：12 / 15
页数：4
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