Mg-doped high-quality AlxGa1-xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

被引：24
|
作者：
Imura, M. [1 ]
Kato, N. [1 ]
Okada, N. [1 ]
Balakrishnan, K. [1 ]
Iwaya, M. [1 ]
Kamiyama, S. [1 ]
Amano, H. [1 ]
Akasaki, I. [1 ]
Noro, T. [2 ]
Takagi, T. [2 ]
Bandoh, A. [3 ]
机构：
[1] Meijo Univ, Fac Sci & Technol, 21st COE Nano Factory, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan
[2] IBIDEN Co Ltd, Gifu 5038503, Japan
[3] Showa Denko K K, Chiba 2670056, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期
关键词：
D O I：
10.1002/pssc.200674880
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the growth of Mg-doped AlxGa1-xN alloys and characterization of their optical properties. Under the low Mg concentration in the range 2 x 10(17) to 1 x 10(18) cm(-3) of AlxGa1-xN, the activation energy of Mg acceptor became higher and higher with increase in the Al content of AlxGa1-xN. The experimental results for activation energies of Mg acceptor fitted quite well with the hydrogen atom like model. By the Haynes' rule, relationship between bound-excition energy and activation energy of Mg acceptor was investigated, which coincided with our experimental results. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2502 / +
页数：2
相关论文
共 50 条
  • [21] Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
    Xu, DP
    Yang, H
    Zhao, DG
    Li, JB
    Zheng, LX
    Wang, YT
    Li, SF
    Duan, LH
    Wu, RH
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) : 40 - 44
  • [22] Defect reduction in AlxGa1-xN films grown by metal organic chemical vapor deposition
    Park, Y.S. (yspark@dongguk.edu), 1600, Japan Society of Applied Physics (42):
  • [23] Defect reduction in AlxGa1-xN films grown by metal organic chemical vapor deposition
    Park, YS
    Kim, KH
    Lee, JJ
    Kim, HS
    Kang, TW
    Jiang, HX
    Lin, JY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (03): : 1231 - 1232
  • [24] Dislocations in AIN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy
    Imura, Masataka
    Nakano, Kiyotaka
    Fujimoto, Naoki
    Okada, Narihito
    Balakrishnan, Krishnan
    Iwaya, Motoaki
    Kamiyama, Satoshi
    Amano, Hiroshi
    Akasaki, Isamu
    Noro, Tadashi
    Takagi, Takashi
    Bandoh, Akira
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A): : 1458 - 1462
  • [25] Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy
    Imura, Masataka
    Nakano, Kiyotaka
    Fujimoto, Naoki
    Okada, Narihito
    Balakrishnan, Krishnan
    Iwaya, Motoaki
    Kamiyama, Satoshi
    Amano, Hiroshi
    Akasaki, Isamu
    Noro, Tadashi
    Takagi, Takashi
    Bandoh, Akira
    1600, Japan Society of Applied Physics, 1-12-3 Kudan-Kita,k Chiyoda-ku, Tokyo, 102, Japan (46):
  • [26] Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy
    Y.A. Xi
    K.X. Chen
    F. Mont
    J.K. Kim
    E.F. Schubert
    C. Wetzel
    W. Liu
    X. Li
    J.A. Smart
    Journal of Electronic Materials, 2007, 36 : 533 - 537
  • [27] Optimization of high-quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor-phase epitaxy
    Xi, Y. A.
    Chen, K. X.
    Mont, F.
    Kim, J. K.
    Schubert, E. F.
    Wetzel, C.
    Liu, W.
    Li, X.
    Smart, J. A.
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 533 - 537
  • [28] Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy
    Pozina, G.
    Hemmingsson, C.
    Bergman, J. P.
    Kawashima, T.
    Amano, H.
    Akasaki, I.
    Usui, A.
    Monemar, B.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 110 - +
  • [29] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties
    Koizumi, Atsushi
    Kawabata, Kosuke
    Lee, Dong-gun
    Nishikawa, Atsushi
    Terai, Yoshikazu
    Ofuchi, Hironori
    Honma, Tetsuo
    Fujiwara, Yasufumi
    OPTICAL MATERIALS, 2015, 41 : 75 - 79
  • [30] Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1-xN/AlN/GaN heterostructures
    Biyikli, N.
    Ozgur, U.
    Ni, X.
    Fu, Y.
    Morkoc, H.
    Kurdak, C.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)
12345