Si-based Photodetectors in Optical Communication

被引:0
|
作者
Das, N. R. [1 ]
机构
[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, India
关键词
Si-photodetector; SiGe; Si-CMOS; Optical detector; HIGH-SPEED; SILICON; BANDWIDTH; PHOTODIODES; PERFORMANCE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.
引用
收藏
页码:436 / 441
页数:6
相关论文
共 50 条
  • [31] Monolithic Si-based technology for optical receiver circuits
    Cannon, DD
    Luan, HC
    Danielson, DT
    Jongthammanurak, S
    Liu, J
    Michel, J
    Wada, K
    Kimerling, LC
    QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE, 2003, 4999 : 145 - 155
  • [32] Study of optical nonlinearity in amorphous Si-based alloys
    Chen, Kunji
    Xu, Jun
    Huang, Xinfan
    Li, Zhifeng
    Fritzsche, Hellmut
    Journal of Non-Crystalline Solids, 1991, 137-38 (pt 1) : 631 - 634
  • [33] Functional metal-insulator-metal top contacts for Si-based color photodetectors
    Butun, Serkan
    Aydin, Koray
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (22)
  • [34] Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
    Li, C
    Yang, QQ
    Ou, HY
    Wang, QM
    50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, 2000, : 1486 - 1488
  • [35] Optimizing geometry and metal-dependent performance of Si-based Schottky plasmonic photodetectors
    Abubakr, Eslam
    Abadi, Ashenafi
    Oshita, Masaaki
    Saito, Shiro
    Kan, Tetsuo
    OPTICAL MATERIALS, 2024, 150
  • [36] NUOVA OFFICINA ASSERGI: a novel infrastructure for the production of cryogenic and radiopure Si-based photodetectors
    Consiglio, L.
    Flammini, A.
    Ianni, A.
    Marasciulli, A.
    Panella, G.
    Pietrofaccia, L.
    Sablone, D.
    Tartaglia, R.
    FRONTIERS IN PHYSICS, 2024, 12
  • [37] High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system
    JINLAI CUI
    JUN ZHENG
    YUPENG ZHU
    XIANGQUAN LIU
    YIYANG WU
    QINXING HUANG
    YAZHOU YANG
    ZHIPENG LIU
    ZHI LIU
    YUHUA ZUO
    BUWEN CHENG
    Photonics Research, 2024, 12 (04) : 767 - 773
  • [38] High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 pm band communication system
    Cui, Jinlai
    Zheng, Jun
    Zhu, Yupeng
    Liu, Xiangquan
    Wu, Yiyang
    Huang, Qinxing
    Yang, Yazhou
    Liu, Zhipeng
    Liu, Zhi
    Zuo, Yuhua
    Cheng, Buwen
    PHOTONICS RESEARCH, 2024, 12 (04) : 767 - 773
  • [39] Enhancing The Optical And Electrical Properties of Si-based Nanostructured Materials
    Nalini, R. Pratibha
    Marie, P.
    Cardin, J.
    Dufour, C.
    Dimitrakis, P.
    Normand, P.
    Carrada, M.
    Gourbilleau, F.
    EUROPEAN MATERIALS RESEARCH SOCIETY CONFERENCE SYMPOSIUM: ADVANCED INORGANIC MATERIALS AND CONCEPTS FOR PHOTOVOLTAICS, 2011, 10
  • [40] Strain gauge using Si-based optical microring resonator
    Lei, Longhai
    Tang, Jun
    Zhang, Tianen
    Guo, Hao
    Li, Yanna
    Xie, Chengfeng
    Shang, Chenglong
    Bi, Yu
    Zhang, Wendong
    Xue, Chenyang
    Liu, Jun
    APPLIED OPTICS, 2014, 53 (36) : 8389 - 8394