Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

被引：45

作者：

Lime, F

Oshima, K

Cassé, M

Ghibaudo, G

Cristoloveanu, S

Guillaumot, B

Iwai, H

机构：

[1] ENSERG, IMEP, F-38016 Grenoble, France

[2] CEA, LETI, F-38054 Grenoble, France

[3] ST Microelect, F-38921 Crolles, France

[4] Tokyo Inst Technol, Yokohama, Kanagawa 2268503, Japan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期

关键词：

high-k dielectrics; HfO2; mobility; MOSFET;

D O I：

10.1016/S0038-1101(03)00176-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced channel N and P MOSFETs with HfO2 gate dielectric and metal gate have been fabricated and exhibit high performance. The effective mobility has been characterized at various temperatures for NMOS and PMOS devices. The electron mobility is lower than in SiO2, whereas the hole mobility is relatively unaffected at room temperature but also degraded at low temperatures. The mobility degradation after constant voltage stress suggests a more important Coulomb scattering contribution to mobility as compared to SiO2. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1617 / 1621

页数：5

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