Dislocation formation in the partially coherent interfaces of an embedded layer in a semi-infinite matrix

被引:2
|
作者
Colin, Jerome [1 ]
机构
[1] Univ Poitiers, Inst P, SP2MI Teleport 2, F-86962 Futuroscope, France
关键词
dislocation theory; epitaxial systems; strain layers; mechanics of materials; elasticity; MISFIT DISLOCATIONS; TRANSITION;
D O I
10.1080/09500839.2015.1025885
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The formation of two misfit edge dislocations is theoretically investigated in the interfaces of a layer embedded in a semi-infinite matrix. Assuming the matrix-layer interfaces are partially coherent, the energy variation resulting from the formation of the dislocations from the lateral free surface of the structure has been determined in the shearing stress field due to the partial misfit. The mechanical stability of the structure is analysed with respect to the dislocation formation as a function of the size of the coherent region of the interface and the misfit strain.
引用
收藏
页码:152 / 160
页数:9
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